TORRANCE, Calif., July 31, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Xiaomi’s next-generation 90W GaN charger will be powered by Navitas’ GaNSense Control ICs.
As the world’s smallest 90 W charger, this ultra-compact, high-power-density form-factor measures just 34 × 45 × 34 mm and weighs only 65 grams—approximately half the size and a third the weight of typical GaN chargers.”
The charger integrates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control family combines 4th generation GaN power with high-frequency control functionality. It provides all the benefits of a monolithically integrated GaN power FET and GaN drive, plus a controller and protection features in a single surface-mount package for high-density, high-efficiency chargers, adapters, and auxiliary power designs.
GaNSense Control ICs deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of VDD inductor reduce component count and increase system efficiency. With transient voltage breakdown up to 800 V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver best-in-class efficiency in the smallest form factor.
“The launch of Xiaomi’s 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” said Charles Zha, SVP and APAC GM of Navitas. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection, to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance, industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
[email protected]
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/781cf667-f789-40f8-917b-2c658c3a8894
